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TLC NAND Flash Memory

Most often used in mass storage consumer applications with high cost sensitivity, our triple-level cell (TLC) NAND has the highest cell density, but generally lower performance and endurance specifications. The 128Gb part delivers the same capacity as our 128Gb MLC, but in a die that is 28% smaller.

Storing three bits per cell, TLC NAND devices are value-minded parts used primarily in consumer products that don't require top-tier NAND performance and endurance (fewer PROGRAM/ERASE cycles)—designs like USB thumb drives, client SSDs, and other portable media devices.

Like all raw NAND, TLC NAND requires an external controller to aid with array management, ECC, wear leveling, and other management functions.

Density

Select Density
  • 256Gb
  • 512Gb
  • 1Tb
  • 2Tb
  • 4Tb
  • 8Tb
Range: 256Gb - 8Tb
  • Width
    x8
  • Voltage
    3.3V
  • Package
    Wafer, VBGA
  • Op. Temp.
    0C to +70C
  • Width
    x8
  • Voltage
    2.5V, 3.3V
  • Package
    Wafer, VBGA
  • Op. Temp.
    0C to +70C
  • Width
    x8
  • Voltage
    2.5V, 3.3V
  • Package
    VBGA
  • Op. Temp.
    0C to +70C
  • Width
    x8
  • Voltage
    2.5V, 3.3V
  • Package
    VBGA
  • Op. Temp.
    0C to +70C
  • Width
    x8
  • Voltage
    2.5V, 3.3V
  • Package
    LBGA
  • Op. Temp.
    0C to +70C
  • Width
    x8
  • Voltage
    3.3V
  • Package
    LBGA
  • Op. Temp.
    0C to +70C
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